Doctorate (M/F) Electrical and optical control of multi-ferroic van der Waals devices

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Doctorate (M/F) Electrical and optical control of multi-ferroic van der Waals devices Sintesi in italiano (traduzione automatica): Il progetto di dottorato si svolgerà presso la Scuola Dottorale di Fisica e Chimica Fisica dell'Università di Strasburgo, all'interno dell'Istituto di Fisica e Chimica dei Materiali di Strasburgo (IPCMS). Il candidato selezionato condurrà ricerche sulla manipolazione elettrica e ottica del trasporto di spin in semiconduttori antiferromagnetici bidimensionali, utilizzando materiali come CrSBr e CrPS₄. Le mansioni principali includono la progettazione, fabbricazione e caratterizzazione di eterostrutture van der Waals. È richiesta una laurea in Fisica o un campo correlato. Il lavoro si svolgerà in un ambiente di ricerca internazionale e prevede occasionali viaggi in Francia e in Europa per conferenze e campagne sperimentali. Non sono previsti turni notturni o lavoro nei fine settimana. This PhD project will be carried out within the Doctoral School of Physics and Physical Chemistry (ED 182) at the University of Strasbourg. The research will take place at the Institute of Physics and Chemistry of Materials of Strasbourg (IPCMS, UMR 7504, CNRS and the University of Strasbourg), an internationally recognized research and training institute specializing in materials science and nanoscience. With more than three decades of scientific excellence and a vibrant community of permanent researchers, engineers, and students, IPCMS offers an outstanding interdisciplinary environment at the interface of physics and chemistry. The institute hosts several state-of-the-art shared experimental facilities, including certified platforms for nanofabrication, electron microscopy, X-ray diffraction, SQUID magnetometry, and PPMS measurements. IPCMS is located on the Cronenbourg campus in Strasbourg, which is easily accessible by public transportation (tramway and bus) as well as through the extensive cycling network of the Eurométropole. The campus provides an attractive working environment with facilities including a university restaurant and sports amenities. The successful candidate will join an international research environment and will benefit from regular interactions with the academic partners of the ANR **MULTISPIN** project. The position may involve occasional travel within France and Europe to attend consortium meetings, experimental campaigns, and international scientific conferences. No night work, on-call duties, or regular weekend work is expected. This position falls within the scope of the French regulations on the Protection of Scientific and Technical Potential (PPST). Consequently, in accordance with national regulations, the candidate's appointment is subject to prior authorization by the competent authority of the French Ministry of Higher Education and Research (MESR). Two-dimensional (2D) van der Waals antiferromagnetic semiconductors have recently emerged as an exceptionally rich platform at the intersection of magnetism, semiconductor physics, and light–matter interactions. Unlike conventional metallic magnets, materials such as CrSBr and CrPS₄ combine robust magnetic order with a semiconducting band gap and strong optical activity, while remaining fully compatible with electrostatic gate control and van der Waals integration. This creates an exciting and largely unexplored opportunity to develop spintronic functionalities that can be controlled not only by magnetic fields but also directly by electric fields and light—an essential requirement for the next generation of energy-efficient, optoelectronically reconfigurable information technologies. The objective of this PhD project is to investigate and control the electrical and optical manipulation of spin transport in 2D antiferromagnetic semiconductors, using CrSBr and CrPS₄ as model systems, with the possibility of extending the study to other related van der Waals magnetic materials. The PhD candidate will design, fabricate, and characterize gated van der Waals heterostructures in which spin-selective transport can be tuned through electrostatic gating and displacement-field engineering, and subsequently modulated by wavelength- and polarization-resolved optical excitation. The main scientific objectives are to: * develop high-quality gated van der Waals heterostructures combining 2D antiferromagnetic semiconductors with spin-selective transport channels; * investigate nonequilibrium spin transport under the combined action of electric fields, magnetic fields, and optical excitation; * disentangle the respective roles of magnetic order, electronic band structure, and light-induced effects in controlling spin transport; * identify device concepts relevant to low-power opto-spintronic information processing and memory technologies. From a methodological perspective, the project will encompass the entire experimental workflow, including the nanofabricatio Annuncio in inglese. Fonte: Euraxess (Commissione europea).